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:选用增强/耗尽型(E/D)结构的腰配高电子迁移率晶体管(PHEMT)技术,研制开发的砷化镓MMIC单片六位数字控制衰减器,具有衰减精度精确、承受效率大、线性度高级特色,而且集成了驱动器,使得输入信号控制线减少了一半,大大减少了系统布线的难度。产品由GaAsPHEMT标准技术线加工。

(: Select enhancement/depletion (E/D) structure waist with high electron mobility transistor (PHEMT) technology, developed GaAs MMIC monolithic six-bit digital control attenuator, with accurate attenuation accuracy and high withstand efficiency , advanced linearity features, and integrated driver, making the input signal control lines reduced by half, greatly reducing the difficulty of system wiring. Products are processed by GaAsPHEMT standard technology lines.)

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